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  4v drive nch + nch mosfet MP6K31 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) built-in g-s protection diode. 2) small surface mount package (mpt6). 3) low voltage drive. (4v) ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 MP6K31 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 2a pulsed i dp ? 8a continuous i s 1.2 a pulsed i sp 8a 2.0 w / total 1.4 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current (body diode) drain current parameter power dissipation (6) (4)(5) (1) (3)(2) (1) (2) (3) (4) (5) (6) (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode *2 *1 *1 mpt6 (dual) (1) (2) (3) (6) (5) (4) 1/6 2010.09 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
MP6K31 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 210 290 i d =2a, v gs =10v - 240 330 i d =2a, v gs =4.5v - 255 350 i d =2a, v gs =4.0v forward transfer admittance l y fs l 1.4 - - s i d =2a, v ds =10v input capacitance c iss - 110 - pf v ds =10v output capacitance c oss - 28 - pf v gs =0v reverse transfer capacitance c rss - 12 - pf f=1mhz turn-on delay time t d(on) -6-nsi d =1a, v dd 30v rise time t r - 10 - ns v gs =10v turn-off delay time t d(off) - 20 - ns r l =30 ? fall time t f -9-nsr g =10 ? total gate charge q g - 2.0 - nc i d =2a, v dd 30v gate-source charge q gs - 0.8 - nc v gs =5v gate-drain charge q gd - 0.4 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =1.2a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * 2/6 2010.09 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
MP6K31 ? electrical characteristic curves (ta = 25 ? c) 0 1 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain-source voltage : v ds [v] typical output characteristics ( ) v gs =2.5v t a =25 pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v 0 1 2 0246810 drain current : i d [a] drain-source voltage : v ds [v] typical output characteristics ( ) v gs =2.5v t a =25 pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v 1000 10000 e resistance static drain-source on-state resistance vs. drain current t a =25 pulsed 1000 10000 resistance static drain-source on-state resistance vs. drain current v gs =10v pulsed t a =125 t a =75 t a =25 t a =-25 10 100 1000 0.01 0.1 1 10 static drain-source on-stat e r ds( on) [m ? ] drain current : i d [a] v gs =4.0v v gs =4.5v v gs =10v 10 100 1000 0.01 0.1 1 10 static drain-source on-state r ds (on) [m ? ] drain current : i d [a] 10 100 1000 10000 0.01 0.1 1 10 static drain-source on-state resistance r ds (on) [m ? ] drain current : i d [a] static drain-source on-state resistance vs. drain current v gs =4.5v pulsed t a =125 t a =75 t a =25 t a =-25 10 100 1000 10000 0.01 0.1 1 10 static drain-source on-state resistance r ds (on) [m ? ] drain current : i d [a] static drain-source on-state resistance vs. drain current v gs =4v pulsed t a =125 t a =75 t a =25 t a =-25 3/6 2010.09 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
MP6K31 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance yfs [s] drain current : i d [a] forward transfer admittance vs. drain current v ds =10v pulsed t a =-25 t a =25 t a =75 t a =125 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate-source voltage : v gs [v] typical transfer characteristics v ds =10v pulsed t a =125 t a =75 t a =25 t a =-25 1 10 is [a] source current vs. source-drain voltage v gs =0v pulsed t a =125 t = 75 400 500 600 t ate resistance ? ] static drain-source on-state resistance vs. gate-source voltage t a =25 pulsed i d =2.0a i d =1.0a 0.01 0.1 0.0 0.5 1.0 1.5 2.0 source current : source-drain voltage : v sd [v] t a = 75 t a =25 t a =-25 0 100 200 300 0246810 static drain-source on-s t r ds (on) [m ? gate-source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] switching characteristics t d(on) t r t d(off) t f v dd P30v v gs =10v r g =10 ? t a =25 pulsed 0 2 4 6 8 10 0 1 2 3 4 5 gate-source voltage : v gs [v] total gate charge : qg [nc] dynamic input characteristics t a =25 v dd =30v i d =2a pulsed 4/6 2010.09 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
MP6K31 1 10 100 1000 0.01 0.1 1 10 capacitance : c [pf] drain-source voltage : v ds [v] typical capacitance vs. drain-source voltage t a =25 f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 0.1 1 10 100 drain current : i d [ a ] drain-source voltage : v ds [ v ] maximum safe operating area t a =25 single pulse (1unit) mounted on a ceramic board. 30mm x 30mm x 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v ) p w = 100 s p w = 1ms p w = 10ms dc operation 1 r esistance : r t normalized transient thermal resistance v.s. pulse width t a =25 single pulse mounted on a ceramic board. 30mm 30mm 0.8mm) rth (ch-a) =89.3 /w (1unit) rth (ch-a) (t)=r(t) rth (ch-a) 0.001 0.01 0.1 0.0001 0.01 1 100 normalized transient thermal r pulse width pw s 5/6 2010.09 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
MP6K31 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd 6/6 2010.09 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.


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